Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including backside contact structure having positive slope and method of forming thereof

Semiconductor device including backside contact structure having positive slope and method of forming thereof

US Patent 12255248 · Granted Mar 18, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including interconnect structure with metal bridge pattern 2025
Integrated circuit devices including stacked field effect transistors and method2025
Semiconductor device including backside contact structure with silicide layer fo2025
Semiconductor device including backside contact structure with silicide layer fo2025
Article of footwear2025
Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional sta2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Transistor stacks having insulating spacers, and related fabrication methods2025
Integrated circuit devices including metal lines spaced apart from metal vias, a2025
Integrated circuit devices including metal lines spaced apart from metal vias, a2025
Three-dimensional stacked semiconductor device including simplified source/drain2025
Integrated circuit devices including a metal resistor and methods of forming the2025