Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming FinFET devices with a fin top hardmask

Method for forming FinFET devices with a fin top hardmask

US Patent 12211921 · Granted Jan 28, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate structure for semiconductor device2025
Structure of isolation feature of semiconductor device structure2025
Fin-like field effect transistor patterning methods for achieving Fin width unif2025
Integrated circuits with gate cut features2025
Integrated circuits with finFET gate structures2025
Semiconductor devices with backside power rail and backside self-aligned via2025
Semiconductor devices with backside power rail and backside self-aligned via2025
Source/drain metal contact and formation thereof2025
2D-channel transistor structure with asymmetric substrate contacts2025
FinFET structure with airgap and method of forming the same2025
FinFET structure with airgap and method of forming the same2025
Nanostructure with various widths2025