Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance

Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance

US Patent 12191196 · Granted Jan 7, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacturing the same2025
Semiconductor device having non-continuous wall structure surrounding a stacked 2025
MOSFET device structure with air-gaps in spacer and methods for forming the same2025
Photosensitive composition and photoresist dry film made therefrom2025
Table base2025
Electronic device2025
Electronic device2025
Electronic device2025
Electronic device2025
Method for manufacturing display device2025
Semiconductor arrangement with airgap and method of forming2025
Semiconductor arrangement with airgap and method of forming2025