Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of modifying portions of layer stacks

Methods of modifying portions of layer stacks

US Patent 12142487 · Granted Nov 12, 2024

Estimated economic value: $39,712,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Atomic layer self aligned substrate processing and integrated toolset2025
Multi color stack for self aligned dual pattern formation for multi purpose devi2025
Methods and apparatus for selective etch stop capping and selective via open for2025
Methods for removing etch stop layers2025
Methods for copper doped hybrid metallization for line and via2024
Low resistance and high reliability metallization module2024
Methods and apparatus for forming dual metal interconnects2024
Self-alignment etching of interconnect layers2023
Stacked transistor device2023
Methods of modifying portions of layer stacks2023
Self-alignment etching of interconnect layers2023