Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Semiconductor device having fin-type field effect transistor and method of manufacturing the same

US Patent 12119351 · Granted Oct 15, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gas removing device and method for removing gas from a pouch type case of a seco2025
Semiconductor device including interconnect structure with metal bridge pattern 2025
Integrated circuit devices including stacked field effect transistors and method2025
Semiconductor device including backside contact structure with silicide layer fo2025
Semiconductor devices2025
Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional sta2025
Semiconductor memory device and method for fabricating the same2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Transistor stacks having insulating spacers, and related fabrication methods2025
Integrated circuit devices including metal lines spaced apart from metal vias, a2025
Three-dimensional stacked semiconductor device including simplified source/drain2025
Integrated circuit devices including a metal resistor and methods of forming the2025