Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

US Patent 12107129 · Granted Oct 1, 2024

Estimated economic value: $170,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light guide plate for image display2025
Light collecting device2025
Vehicle management device managing parking position in a parking lot and vehicle2025
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconduc2025
III-N based material structures, methods, devices and circuit modules based on s2025
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN cryst2024
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconduc2024
Conductive C-plane GaN substrate2023
Conductive C-plane GaN substrate2023
Conductive C-plane GaN substrate2023
Gallium nitride substrate and manufacturing method of nitride semiconductor crys2023
Gallium nitride substrate and manufacturing method of nitride semiconductor crys2023