Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

US Patent 11670687 · Granted Jun 6, 2023

Estimated economic value: $182,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light guide plate for image display2025
Memory system and power control circuit2025
Light collecting device2025
Vehicle management device managing parking position in a parking lot and vehicle2025
III-N based material structures, methods, devices and circuit modules based on s2025
Puncture needle, puncture device, and blood sampling device2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024