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Home › Nitride semiconductor device and substrate thereof, method for forming rare earth element-added nitride layer, and red-light emitting device and method for manufacturing the same

Nitride semiconductor device and substrate thereof, method for forming rare earth element-added nitride layer, and red-light emitting device and method for manufacturing the same

US Patent 12074254 · Granted Aug 27, 2024

Estimated economic value: $340,000 ⓘ

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