Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device

Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device

US Patent 12051725 · Granted Jul 30, 2024

Estimated economic value: $19,984,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Contextual formation of a junction barrier diode and a Schottky diode in a MPS d2025
Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct 2025
Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct 2025
Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct 2025
Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct 2025
Overvoltage protection device2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Wide band gap semiconductor electronic device having a junction-barrier Schottky2025
Ohmic contact formation in a SiC-based electronic device2025
Scalable MPS device based on SiC2025
JBS device with improved electrical performances, and manufacturing process of t2025
JBS device with improved electrical performances, and manufacturing process of t2025