Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Wet etching chemistry and method of forming semiconductor device using the same

Wet etching chemistry and method of forming semiconductor device using the same

US Patent 12046476 · Granted Jul 23, 2024

Estimated economic value: $16,868,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a 3-D semiconductor memory structure comprising horizontal an2025
Wet cleaning with tunable metal recess for via plugs2025
Wet cleaning with tunable metal recess for via plugs2025
Method for modifying metal-including material in semiconductor manufacturing pro2025
Method for modifying metal-including material in semiconductor manufacturing pro2025
Method of breaking through etch stop layer2025
Method of breaking through etch stop layer2025
Etchant for etching a cobalt-containing member in a semiconductor structure and 2025
Etchant for etching a cobalt-containing member in a semiconductor structure and 2025
Gate resistance improvement and method thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Fin field-effect transistor and method of forming the same2025