Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

US Patent 11942532 · Granted Mar 26, 2024

Estimated economic value: $9,982,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Tunable structure profile2025
Metal gate structure and methods of fabricating thereof2025
Method of making a FinFET device including a step of removing a portion of a fin2025
Semiconductor structure and method of manufacturing the same2025
Multipatterning gate processing2025
Multipatterning gate processing2025
Air spacers around contact plugs and method forming same2025
Residue-free metal gate cutting for fin-like field effect transistor2025
Driver assistance system terminal2025
Method for fabricating semiconductor structure with cutting depth control2025
Fin field-effect transistor and method of forming the same2025
Fin field-effect transistor and method of forming the same2025