Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base

Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base

US Patent 11916136 · Granted Feb 27, 2024

Estimated economic value: $44,049,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Lateral phototransistor2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
Array arrangements of vertical bipolar junction transistors2025
Bipolar junction transistor arrays2025
Resistive memory elements accessed by bipolar junction transistors2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Forksheet semiconductor structure including at least one bipolar junction transi2025
Forksheet semiconductor structure including at least one bipolar junction transi2025
Lateral bipolar transistors2025
Lateral bipolar transistors2025