Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor devices having late-formed isolation structures

Semiconductor devices having late-formed isolation structures

US Patent 11908857 · Granted Feb 20, 2024

Estimated economic value: $72,459,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bottom contact formation for 4F2 vertical DRAM2025
Transistors with multiple silicide layers2025
Silicon germanium fins and integration methods2025
Vertical FinFet formation using directional deposition2025
High-voltage semiconductor device structures2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Bipolar junction transistors with a nanosheet intrinsic base2025
Fin on silicon-on-insulator2025
High-voltage semiconductor device structures2025
Field effect transistor with vertical nanowire in channel region and bottom spac2024
Lateral bipolar transistor2024
Single fin structures2024