Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with improved junction termination extension region

Semiconductor device with improved junction termination extension region

US Patent 11901407 · Granted Feb 13, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and electrical contact2024
Method of manufacturing semiconductor device with silicon carbide body2024
Semiconductor device and method for forming a semiconductor device2023
Silicon carbide device with compensation region and method of manufacturing2023
Silicon carbide field-effect transistor including shielding areas2023
Silicon carbide device with compensation layer and method of manufacturing2023
SiC device with channel regions extending along at least one of the (1-100) plan2022
Silicon carbide device with Schottky contact2022
Pseudo Schottky diode2022
Semiconductor device and method for forming a semiconductor device2022
Semiconductor device with silicon carbide body2021
Method of manufacturing a silicon carbide semiconductor device with trench gate 2021