Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

US Patent 11866453 · Granted Jan 9, 2024

Estimated economic value: $30,329,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transition metal deposition processes and deposition assembly2025
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition2025
Selective gate spacers for semiconductor devices2022
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition2022
Passivation layer for germanium substrate2022
Selective gate spacers for semiconductor devices2021
Selective deposition utilizing sacrificial blocking layers for semiconductor dev2020
Inherently selective precursors for deposition of second or third row transition2019
Selective gate spacers for semiconductor devices2019
Selective deposition utilizing sacrificial blocking layers for semiconductor dev2019
Transition metal dry etch by atomic layer removal of oxide layers for device fab2019
Precursor and process design for photo-assisted metal atomic layer deposition (A2018