Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for Si gap fill by PECVD

Method for Si gap fill by PECVD

US Patent 11848232 · Granted Dec 19, 2023

Estimated economic value: $56,890,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for providing a reel game having features associated with pe2025
Pulsed plasma (DC/RF) deposition of high quality C films for patterning2025
Processes for depositing SiB films2025
Gaming device with multiple triggerable respin features2025
High quality quantum computer components2025
High density carbon films for patterning applications2025
Electronic device fabrication using area-selective deposition2025
Systems and methods for substrate support temperature control2025
Display apparatus having signal lines on a multi-layer metal layer2025
Low temperature graphene growth2025
Display panel2025
Remote capacitively coupled plasma deposition of amorphous silicon2025