Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor source/drain contacts and methods of forming the same

Transistor source/drain contacts and methods of forming the same

US Patent 11798943 · Granted Oct 24, 2023

Estimated economic value: $9,398,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Soft ashing process for forming protective layer on conductive cap layer of semi2025
Fin field-effect transistor device and method2025
Vertical device having a protrusion source2025
Interconnect structure for semiconductor devices2025
Gap patterning for metal-to-source/drain plugs in a semiconductor device2025
Fin field-effect transistor and method of forming the same2025
Middle-of-line interconnect structure and manufacturing method2025
Middle-of-line interconnect structure and manufacturing method2025
Semiconductor device and method2025
Memory cell with low resistance top electrode contact and methods for forming th2025
Interconnect structure for semiconductor devices2025
Dielectric cap structure in semiconductor devices and methods of manufacturing t2024