Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for layer transfer with localised reduction of a capacity to initiate a fracture

Method for layer transfer with localised reduction of a capacity to initiate a fracture

US Patent 11769687 · Granted Sep 26, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for preparing a thin layer that includes forming a weakened zone in a cen2025
Method for manufacturing a SOI or SiGeOI type semiconductor-on-insulator substra2025
Semiconductor substrate polishing method2025
Semiconductor substrate polishing method2025
Method for modifying the strain state of a block of a semiconducting material2025
Method for modifying a strain state of at least one semiconductor layer2024
Method for modifying a strain state of at least one semiconductor layer2024
Optoelectronic device comprising a semiconductor layer based on GeSn having a si2024
Low-temperature method for transfer and healing of a semiconductor layer2024
Method for detecting the splitting of a substrate weakened by implanting atomic 2024
Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing la2024
Method for fabricating a doped region of a microelectronic device2024