Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region

Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region

US Patent 11721689 · Granted Aug 8, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mesa contact for MOS controlled power semiconductor device2025
Semiconductor switching module with insulated gate bipolar transistor and unipol2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Semiconductor device including first gate electrode and second gate electrode2025
Power semiconductor device2025
Power semiconductor device with dV/dt controllability and low gate charge2025
Power semiconductor device with dV/dt controllability and low gate charge2025
Power semiconductor device having a barrier region2024
Power semiconductor device with p-contact and doped insulation blocks defining c2024
Semiconductor device including trench structure and manufacturing method2024
Method of producing a silicon carbide device with a trench gate2024
Diode structure of a power semiconductor device2023