Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Asymmetric junctions of high voltage transistor in NAND flash memory

Asymmetric junctions of high voltage transistor in NAND flash memory

US Patent 11653496 · Granted May 16, 2023

Estimated economic value: $11,130,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and diagnostic apparatus for determining enteritis using machine learning2025
High-voltage bushing and high-voltage power transmission system2025
Method and diagnostic apparatus for determining constipation using machine learn2025
Display device2025
Memory array having connections going through control gates2025
Split block array for 3D NAND memory2025
Split block array for 3D NAND memory2025
Independent multi-page read operation enhancement technology2025
Pump discharge sequence improvements in external power supply mode for pulse rec2025
Pump discharge sequence improvements in external power supply mode for pulse rec2025
Grouped global wordline driver with shared bias scheme2025
Grouped global wordline driver with shared bias scheme2025