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Home › Methods used in forming integrated circuitry comprising a stack comprising vertically-alternating first tiers and second tiers with the stack comprising a cavity therein that comprises a stair-step structure

Methods used in forming integrated circuitry comprising a stack comprising vertically-alternating first tiers and second tiers with the stack comprising a cavity therein that comprises a stair-step structure

US Patent 11647633 · Granted May 9, 2023

Estimated economic value: $19,484,000 ⓘ

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