Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates

Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates

US Patent 11621335 · Granted Apr 4, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for magnetic resonance image quality assessment and magnetic resonance im2025
Adaptive bias decoder for non-volatile memory system2025
Adaptive bias decoder for non-volatile memory system2025
Method of forming a device with planar split gate non-volatile memory cells, pla2025
Output array neuron conversion and calibration for analog neural memory in deep 2025
Neural network classifier using array of three-gate non-volatile memory cells2025
Memory device of non-volatile memory cells2025
Deep learning neural network classifier using non-volatile memory array2025
Neural network classifier using array of three-gate non-volatile memory cells2025
Films comprising bright silver based quaternary nanostructures2025
Neural network classifier using array of three-gate non-volatile memory cells2025
Testing of analog neural memory cells in an artificial neural network2025