Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bipolar transistor with elevated extrinsic base and methods to form same

Bipolar transistor with elevated extrinsic base and methods to form same

US Patent 11588043 · Granted Feb 21, 2023

Estimated economic value: $70,256,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Lateral bipolar transistors2025
Lateral bipolar transistors with gate structure aligned to extrinsic base2025
Heterojunction bipolar transistors with a cut stress liner2025
Lateral bipolar transistor with gated collector2025
Electro-absorption modulators with stacked waveguide tapers2025
Bipolar transistor structure on semiconductor fin and methods to form same2024
Lateral bipolar transistor2024
Transistor with wrap-around extrinsic base2024