Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective hybrid capping layer for metal gates of transistors

Selective hybrid capping layer for metal gates of transistors

US Patent 11532509 · Granted Dec 20, 2022

Estimated economic value: $3,756,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Adaptive gain for compensation in a digital voltage regulator2025
Semiconductor devices including backside power via and methods of forming the sa2025
Semiconductor device and method of forming the same2025
Transistor gate structures and methods of forming the same2025
Method of manufacturing semiconductor devices and semiconductor devices2025
Semiconductor device and method of fabricating the same2025
Nanostructure field-effect transistor device and method of forming2025
Hardmask formation with hybrid materials in semiconductor device2025
Methods of forming semiconductor devices2025
Electrophoresis display2025
Dummy Fin structures and methods of forming same2025
Electrophoresis display2025