Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices

Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices

US Patent 11424349 · Granted Aug 23, 2022

Estimated economic value: $115,313,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Lateral phototransistor2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
Array arrangements of vertical bipolar junction transistors2025
Bipolar junction transistor arrays2025
Resistive memory elements accessed by bipolar junction transistors2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Forksheet semiconductor structure including at least one bipolar junction transi2025
Forksheet semiconductor structure including at least one bipolar junction transi2025
Lateral bipolar transistors2025
Lateral bipolar transistors2025