Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for growing GaN crystal and c-plane GaN substrate

Method for growing GaN crystal and c-plane GaN substrate

US Patent 11404268 · Granted Aug 2, 2022

Estimated economic value: $111,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light collecting device2025
Vehicle management device managing parking position in a parking lot and vehicle2025
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconduc2025
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crysta2024
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN cryst2024
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconduc2024
Conductive C-plane GaN substrate2023
Conductive C-plane GaN substrate2023
Conductive C-plane GaN substrate2023
Conductive C-plane GaN substrate2023