Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › SiC epitaxial growth apparatus having purge gas supply ports which surround a vicinity of a raw material gas supply port

SiC epitaxial growth apparatus having purge gas supply ports which surround a vicinity of a raw material gas supply port

US Patent 11326275 · Granted May 10, 2022

Estimated economic value: $72,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary 2025
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer2023
SiC chemical vapor deposition apparatus2023
Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial w2022
Deposition apparatus having particular arrangement of raw material supply port, 2022
SiC chemical vapor deposition apparatus and method of manufacturing SiC epitaxia2022
SiC chemical vapor deposition apparatus and method of manufacturing SiC epitaxia2022
SiC epitaxial growth apparatus2020