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Home › Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode

Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode

US Patent 11264452 · Granted Mar 1, 2022

Estimated economic value: $10,407,000 ⓘ

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