Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same

Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same

US Patent 11177284 · Granted Nov 16, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device including laterally separated source lines and m2025
Memory device including composite metal oxide semiconductor channels and methods2025
Memory device including composite metal oxide semiconductor channels and methods2025
Bonded assembly including interconnect-level bonding pads and methods of forming2025
Bonded assembly including interconnect-level bonding pads and methods of forming2025
Three-dimensional nor array and method of making the same2025
Three-dimensional nor array and method of making the same2025
Three-dimensional nor array and method of making the same2025
Three-dimensional nor array and method of making the same2025
Three dimensional memory device containing resonant tunneling barrier and high m2025
Three dimensional memory device containing resonant tunneling barrier and high m2025
Three dimensional memory device containing resonant tunneling barrier and high m2025