Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same

MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same

US Patent 11152381 · Granted Oct 19, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trench capacitor having improved capacitance and fabrication method thereof2023
Method for fabricating semiconductor memory device with buried capacitor and fin2023
Method of fabricating magnetic memory device2023
Physically unclonable function circuit having lower gate-to-source/drain breakdo2022
One-time programmable memory device and fabrication method thereof2022
Stacked capacitor with horizontal and vertical fin structures and method for mak2022
1.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain2022
Semiconductor memory device with buried capacitor and fin-like electrodes2022
Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ e2022
Magnetic memory device and method for manufacturing the same2021
Trench capacitor having improved capacitance and fabrication method thereof2021
One time programmable (OTP) bits for physically unclonable functions2021