Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical fin field effect transistor devices with a replacement metal gate

Vertical fin field effect transistor devices with a replacement metal gate

US Patent 11049858 · Granted Jun 29, 2021

Estimated economic value: $5,149,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-overlapping gate conductors for GAA transistors2025
Stacked field effect transistor structure with independent gate control between 2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Method and structure of forming independent contact for staggered CFET2025
Semiconductor device with power via2025
Stressed material within gate cut region2025
Stacked FETS including devices with thick gate oxide2025
Stacked FETS including devices with thick gate oxide2025
Full wrap around backside contact2025
High density stacked vertical transistor static random access memory structure2025
FinFET devices2025