Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)

Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)

US Patent 11024728 · Granted Jun 1, 2021

Estimated economic value: $22,362,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Antenna module as a radio-frequency (RF) integrated circuit (IC) die with an int2025
Capacitor embedded 3D resonator for broadband filter2025
Reducing parasitic capacitance2025
Substrate comprising acoustic resonators configured as at least one acoustic fil2025
3D inductor design using bundle substrate vias2025
Antenna modules employing three-dimensional (3D) build-up on mold package to sup2025
Thermal bridge interposer structure2024
Surface acoustic wave (SAW) filter packages employing an enhanced thermally cond2024
ESL-less AC resistor for high frequency applications2024
Device on ceramic substrate2023
Radio frequency front end (RFFE) hetero-integration2023
Package comprising stacked filters with a shared substrate cap2023