Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to form ultrashallow junctions using atomic layer deposition and annealing

Method to form ultrashallow junctions using atomic layer deposition and annealing

US Patent 10770297 · Granted Sep 8, 2020

Estimated economic value: $107,099,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Atomic layer etch and deposition processing systems including a lens circuit wit2024
Display device including a light guide plate with protrusions2024
Display device having a private mode and a sharing mode2023
Lower plasma-exclusion-zone rings for a bevel etcher2020
Upper plasma-exclusion-zone rings for a bevel etcher2020
Edge exclusion control with adjustable plasma exclusion zone ring2020
Plasma assisted doping on germanium2020
Control of bevel etch film profile using plasma exclusion zone rings larger than2020
Antimony co-doping with phosphorus to form ultrashallow junctions using atomic l2019
Antimony co-doping with phosphorus to form ultrashallow junctions using atomic l2019
Antimony co-doping with phosphorus to form ultrashallow junctions using atomic l2019
Plasma assisted doping on germanium2019