Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming semiconductor device structure with metal silicide layer

Method for forming semiconductor device structure with metal silicide layer

US Patent 10734489 · Granted Aug 4, 2020

Estimated economic value: $11,127,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device structure with fuse and resistor and method for preparing t2025
Semiconductor arrangement with airgap and method of forming2025
Method of making semiconductor structure including buffer layer2025
Method of making semiconductor structure including buffer layer2025
Method of making semiconductor structure including buffer layer2025
Polysilicon removal in word line contact region of memory devices2025
Semiconductor wafer with devices having different top layer thicknesses2025
Reducing RC delay in semiconductor devices2025
Semiconductor structure and method for manufacturing the same2025
Semiconductor structure and method for manufacturing the same2025
Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOS2025
Method for forming semiconductor device structure with metal-semiconductor compo2024