Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor

Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor

US Patent 10644142 · Granted May 5, 2020

Estimated economic value: $16,701,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with a field plate having a recessed region and an overhang2025
Wafer with semiconductor devices and integrated electrostatic discharge protecti2025
Wafer with semiconductor devices and integrated electrostatic discharge protecti2025
Transistors with self-aligned source-connected field plates2025
Semiconductor device with conductive elements formed over dielectric layers and 2025
Transistor die with primary and ancillary transistor elements2025
Circuit die with isolation test structure2025
Semiconductor device with an insulating region formed between a control electrod2025
Power amplifier with a power transistor and an electrostatic discharge protectio2024
Transistors with source-connected field plates2024
Semiconductor device with conductive elements formed over dielectric layers and 2024
Transistor with center fed gate2023