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Yuanzheng Yue, Bruce M. Green, Fred Reece Clayton |
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Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor |
Yuanzheng Yue, David C. Burdeaux, Jenn Hwa Huang, Bruce M. Green |
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Semiconductor device with selectively etched surface passivation |
Bruce M. Green, Darrell G. Hill, Karen E. Moore, Jenn Hwa Huang, Yuanzheng Yue +1 more |
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Semiconductor devices with a protection layer and methods of fabrication |
Jenn Hwa Huang, Darrell G. Hill |
2020-08-11 |
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Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor |
Yuanzheng Yue, David C. Burdeaux, Jenn Hwa Huang, Bruce M. Green |
2020-05-05 |
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MISHFET and Schottky device integration |
Bruce M. Green |
2019-04-02 |
| 9972703 |
Transistor with charge enhanced field plate structure and method |
Jenn Hwa Huang |
2018-05-15 |
| 9893156 |
Segmented field plate structure |
Jenn Hwa Huang, Tianwei Sun |
2018-02-13 |
| 9647075 |
Segmented field plate structure |
Jenn Hwa Huang, Tianwei Sun |
2017-05-09 |
| 9425267 |
Transistor with charge enhanced field plate structure and method |
Jenn Hwa Huang |
2016-08-23 |
| 9024324 |
GaN dual field plate device with single field plate metal |
Bruce M. Green |
2015-05-05 |
| 8946779 |
MISHFET and Schottky device integration |
Bruce M. Green |
2015-02-03 |
| 5312764 |
Method of doping a semiconductor substrate |
Clifford Drowley, Erik Egan |
1994-05-17 |