Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-voltage GaN high electron mobility transistors with reduced leakage current

High-voltage GaN high electron mobility transistors with reduced leakage current

US Patent 10622467 · Granted Apr 14, 2020

Estimated economic value: $20,091,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Edge encapsulation for high voltage devices2025
Parasitic capacitance reduction in GaN-on-silicon devices2025
Semiconductor device and method of forming high KT2 high Q acoustic wave resonat2025
Atomic layer deposition of barrier metal layer for electrode of gallium nitride 2024
Monolithic multi-I region diode limiters2024
PIN diodes with multi-thickness intrinsic regions2024
Solderable and wire bondable part marking2024
Semiconductor device and method of forming monolithic surge protection resistor2024
Gate metal formation on gallium nitride or aluminum gallium nitride2024
Vertical etch heterolithic integrated circuit devices2024
Reduced interfacial area III-nitride material semiconductor structures2024
Parasitic capacitance reduction in GaN devices2024