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Home › Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

US Patent 10608174 · Granted Mar 31, 2020

Estimated economic value: $16,494,000 ⓘ

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