Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Systems and methods for in-situ doped semiconductor gate electrodes for wide bandgap semiconductor power devices

Systems and methods for in-situ doped semiconductor gate electrodes for wide bandgap semiconductor power devices

US Patent 10573722 · Granted Feb 25, 2020

Estimated economic value: $18,062,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stress resistant micro-via structure for flexible circuits2019
LED package with red-emitting phosphors2018
High integrity protective coatings2014
Barrier coating and method2014
Epoxy encapsulating and lamination adhesive and method of making same2014
Chip attach adhesive to facilitate embedded chip build up and related systems an2013
Method of forming semiconductor device package having high breakdown voltage and2013
Epoxy encapsulating and lamination adhesive and method of making same2013
Electrical connectors for optoelectronic device packaging2013
Semiconductor device package having high breakdown voltage and low parasitic ind2012
System and apparatus for venting electronic packages and method of making same2011
Index contrast enhanced optical waveguides and fabrication methods2010