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Home › Step fin field-effect-transistor (FinFET) with slim top of fin and thick bottom of fin for electro-static-discharge (ESD) or electrical over-stress (EOS) protection

Step fin field-effect-transistor (FinFET) with slim top of fin and thick bottom of fin for electro-static-discharge (ESD) or electrical over-stress (EOS) protection

US Patent 10510743 · Granted Dec 17, 2019

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