Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

US Patent 10510536 · Granted Dec 17, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Susceptor improvement2025
Flow guide structures and heat shield structures, and related methods, for depos2025
Method for depositing boron and gallium containing silicon germanium layers2025
Method for depositing a Group IV semiconductor and related semiconductor device 2025
Monolithic complementary field-effect transistors having carbon-doped release la2025
Method for cleaning quartz epitaxial chambers2025
Gas-phase reactor system-with a reaction chamber, a solid precursor source vesse2025
Methods for forming a semiconductor structure and related semiconductor structur2024
Semiconductor processing apparatus and methods for calibrating a semiconductor p2024
Methods of forming structures including silicon germanium and silicon layers, de2024
Method and device for depositing silicon onto substrates2024
Gas-phase reactor system-with a reaction chamber, a solid precursor source vesse2023