Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme

Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme

US Patent 10475660 · Granted Nov 12, 2019

Estimated economic value: $6,929,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked vertical transport field effect transistor with anchors2025
Dielectric tuning of negative capacitance in dual channel field effect transisto2025
Double patterned microcooler having alternating fin widths2025
Patterning magnetic tunnel junctions and the like while reducing detrimental res2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025