Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels

Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels

US Patent 10468293 · Granted Nov 5, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical fin-based field effect transistor (FinFET) with neutralized fin tips2025
Systems and methods for data migration2025
Method and system for fin-based voltage clamp2024
Photovoltaic power generation module installation support system2024
Three dimensional perpendicular magnetic tunnel junction with thin film transist2024
Three dimensional perpendicular magnetic tunnel junction with thin film transist2024
Three dimensional perpendicular magnetic tunnel junction with thin film transist2024
Three dimensional perpendicular magnetic tunnel junction with thin film transist2024
Systems and methods for processing and transmitting sensor data2024
AI enabled sensor data acquisition2023
Compact and efficient CMOS inverter2023
Compact and efficient CMOS inverter2023