Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

US Patent 10453693 · Granted Oct 22, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-aqueous electrolyte solution and power storage device using same2025
Seed crystal for single crystal 4H—SiC growth and method for processing the same2023
n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC sin2023
Method for producing p-type 4H-SiC single crystal2023
Data processing device of production equipment2022
Toner binder and toner2021
n-Type SiC single crystal substrate, method for producing same and SiC epitaxial2021
Silicon carbide epitaxial wafer having a thick silicon carbide layer with small 2020
Two-pack type urethane-based adhesive composition2020
Liquid injection method2020
Two-pack curable urethane adhesive composition2019
Method for screening for pluripotent stem cell growth-promoting factor2019