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Home › Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

US Patent 10446743 · Granted Oct 15, 2019

Estimated economic value: $10,854,000 ⓘ

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