Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits

Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits

US Patent 10319425 · Granted Jun 11, 2019

Estimated economic value: $21,100,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid flop tray including different fin size flip-flops2025
Power level comparator with switching input2025
Memory with scan chain testing of column redundancy logic and multiplexing2025
Sense amplifier including pre-amplifying circuit and memory device including the2025
SRAM with improved write performance and write operation method thereof2025
Content addressable memory based on selfrectifying ferroelectric tunnel junction2025
Dual-edge-triggered flip-flop2025
Bit line sense amplifier and semiconductor memory apparatus using the same2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Nonvolatile memory device and latch including the same2024
Physically unclonable function apparatus based on ferroelectric elements and ope2024
Memory with scan chain testing of column redundancy logic and multiplexing2024