Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including a fin structure

Semiconductor device including a fin structure

US Patent 10269966 · Granted Apr 23, 2019

Estimated economic value: $918,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for determining parameters of three dimensional nanostructure and apparat2025
Method for fabricating integrated circuit device with two gate structures2025
Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same2025
Transistors having two-dimensional semiconductor channels2025
Semiconductor device and method of forming the same2025
Integrated circuit structure and method with solid phase diffusion2025
Three dimensional integrated circuit and fabrication thereof2025
Semiconductor device having a 2-D material layer including a channel region and 2024
Wrap around silicide for FinFETs2024
3D capacitor and method of manufacturing same2024
Method of forming source/drain regions with expanded widths2024
Systems and methods for fabricating FinFETs with different threshold voltages2024