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Home › Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path

Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path

US Patent 10224368 · Granted Mar 5, 2019

Estimated economic value: $9,921,000 ⓘ

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