Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate

Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate

US Patent 10217826 · Granted Feb 26, 2019

Estimated economic value: $18,330,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for providing enhanced recommendations based on ratings of off2025
Temperature detection using negative temperature coefficient resistor in GaN set2025
Electrically programmable fuse over crystalline semiconductor materials2025
High-mobility-electron transistors having heat dissipating structures2025
High electron mobility transistor devices having a silicided polysilicon layer2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Field effect transistors with dual field plates2025
High electron mobility transistor devices having a silicided polysilicon layer2025
Multi-channel transistor2024
High voltage device with linearizing field plate configuration2024
Isolation regions for charge collection and removal2024
Structure including multi-level field plate and method of forming the structure2024