Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming high dielectric constant dielectric layer by atomic layer deposition

Method of forming high dielectric constant dielectric layer by atomic layer deposition

US Patent 10204788 · Granted Feb 12, 2019

Estimated economic value: $170,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device and manufacturing method thereof2025
Semiconductor device having contact plug connected to gate structure on PMOS reg2025
Isolation structures in semiconductor devices2025
Semiconductor device and method of fabricating the same2025
Semiconductor devices with backside power rail and methods of fabrication thereo2025
Semiconductor devices and methods of manufacture2025
Integrated circuit with nanostructure transistors and bottom dielectric insulato2025
Semiconductor device structure and methods of forming the same2025
Semiconductor device structure including stacked nanostructures2025
Transistor including dielectric barrier and manufacturing method thereof2025
Method for manufacturing semiconductor structure with isolation feature2025
Gate all around transistor with dual inner spacers2025